SI7454DDP-T1-GE3

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SI7454DDP-T1-GE3

Manufacturer part number:SI7454DDP-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SI7454DDP-T1-GE3 MOSFET Transistor, N Channel, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V

Case Package:SOT-23

Datasheet:SI7454DDP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	33MOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	4.1W Ta 29.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	29.7W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 50V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	21A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	40A
Avalanche Energy Rating (Eas)	7.2 mJ
Max Junction Temperature (Tj)	150°C
Height	1.12mm
Length	6.25mm
Width	5.26mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free