IXTH10P50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH10P50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)
IXTH10P50P Applications
There are a lot of IXYS
IXTH10P50P applications of single MOSFETs transistors.
- Consumer Appliances
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- Lighting
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- Uninterruptible Power Supply
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- AC-DC Power Supply
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- Synchronous Rectification for ATX 1 Server I Telecom PSU
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- Motor drives and Uninterruptible Power Supplies
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- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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