STF15NM60ND

new-10%

Manufacturer part number:STF15NM60ND

Manufacturer:STMicroelectronics

Description:STMICROELECTRONICS STF15NM60ND Power MOSFET, N Channel, 14 A, 600 V, 0.27 ohm, 10 V, 4 V

Case Package:SOT-23

Datasheet:STF15NM60ND Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	FDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STF15
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	299m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 50V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	14A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.299Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	56A
Height	16.4mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant