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STF17N80K5

  • STF17N80K5
  • STF17N80K5

STF17N80K5

STF17N80K5

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 340m Ω @ 7A, 10V ±30V 866pF @ 100V 26nC @ 10V 800V TO-220-3 Full Pack

SOT-23

STF17N80K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ K5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STF17
Power Dissipation-Max 30W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 340m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 866pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.58000 $4.58
50 $3.73100 $186.55
100 $3.42300 $342.3
500 $2.82240 $1411.2
1,000 $2.42200 $2.422
2,500 $2.31420 $4.6284
5,000 $2.23720 $11.186
STF17N80K5 Product Details

STF17N80K5 Description


Using cutting-edge proprietary vertical structure technology, MDmeshTM K5 technology was used to build this extremely high voltage N-channel Power MOSFET. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.



STF17N80K5 Features


  • Lowest RDS(on) x area in the industry

  • The highest merit figure in the sector (FoM)

  • Very little gate charge

  • Avalanche tested and Zener-protected 100 percent



STF17N80K5 Applications


Switching applications


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