STF25N80K5

new-10%

Manufacturer part number:STF25N80K5

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 260m Ω @ 19.5A, 10V ±30V 1600pF @ 100V 40nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STF25N80K5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH5™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STF25
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Case Connection	ISOLATED
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 100V
Current - Continuous Drain (Id) @ 25°C	19.5A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	19.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.26Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	78A
Avalanche Energy Rating (Eas)	200 mJ
Height	16.4mm
Length	10.6mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free