SI2304DDS-T1-GE3

new-10%

Manufacturer part number:SI2304DDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 3.3A SOT23

Case Package:SOT-23

Datasheet:SI2304DDS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	60mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.1W Ta 1.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3.2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	235pF @ 15V
Current - Continuous Drain (Id) @ 25°C	3.3A Ta 3.6A Tc
Gate Charge (Qg) (Max) @ Vgs	6.7nC @ 10V
Rise Time	50ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	3.6A
Threshold Voltage	2.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Nominal Vgs	2.2 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free