TK42E12N1,S1X datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
TK42E12N1,S1X Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2014
Series
U-MOSVIII-H
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
140W Tc
Element Configuration
Single
Power Dissipation
140W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9.4m Ω @ 21A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
3100pF @ 60V
Current - Continuous Drain (Id) @ 25°C
88A Tc
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
64 ns
Continuous Drain Current (ID)
88A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
120V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.09000
$1.09
500
$1.0791
$539.55
1000
$1.0682
$1068.2
1500
$1.0573
$1585.95
2000
$1.0464
$2092.8
2500
$1.0355
$2588.75
TK42E12N1,S1X Product Details
TK42E12N1,S1X Description
Despite TOSHIBA's ongoing efforts to raise the quality and dependability of the Product, a defect or failure may occur. Customers must adhere to safety regulations and provide sufficient designs and safeguards for their hardware, software, and systems to reduce risk and prevent scenarios in which a product's malfunction or failure could result in a loss of life, physical harm, or property damage, including data loss or corruption. Prior to usage, consumers may design with the product, or they may include the product into their own applications.