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TK42E12N1,S1X

TK42E12N1,S1X

TK42E12N1,S1X

Toshiba Semiconductor and Storage

TK42E12N1,S1X datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

TK42E12N1,S1X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Published 2014
Series U-MOSVIII-H
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 140W Tc
Element Configuration Single
Power Dissipation 140W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.4m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 60V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 88A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 120V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.09000 $1.09
500 $1.0791 $539.55
1000 $1.0682 $1068.2
1500 $1.0573 $1585.95
2000 $1.0464 $2092.8
2500 $1.0355 $2588.75
TK42E12N1,S1X Product Details

TK42E12N1,S1X Description


Despite TOSHIBA's ongoing efforts to raise the quality and dependability of the Product, a defect or failure may occur. Customers must adhere to safety regulations and provide sufficient designs and safeguards for their hardware, software, and systems to reduce risk and prevent scenarios in which a product's malfunction or failure could result in a loss of life, physical harm, or property damage, including data loss or corruption. Prior to usage, consumers may design with the product, or they may include the product into their own applications.



TK42E12N1,S1X Features


Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)



TK42E12N1,S1X Applications


Switching Voltage Regulators


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