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IPB65R045C7ATMA2

IPB65R045C7ATMA2

IPB65R045C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 46A TO-263-3

SOT-23

IPB65R045C7ATMA2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ C7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 227W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 46A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 212A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 249 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $7.64856 $7.64856

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