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STF3HNK90Z

STF3HNK90Z

STF3HNK90Z

STMicroelectronics

STF3HNK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STF3HNK90Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 3A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STF3HN
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 3A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 200 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.63664 $1.27328
STF3HNK90Z Product Details

STF3HNK90Z Description


The STMicroelectronics STF3HNK90Z is from the SuperMESH? series obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.



STF3HNK90Z Features


  • Extremely high dv/dt capability

  • 100% avalanche tested

  • Gate charge minimized

  • Very low intrinsic capacitances

  • Very good manufacturing repeatability



STF3HNK90Z Applications


  • Switching Applications


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