STF3HNK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STF3HNK90Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
900V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STF3HN
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
25W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
25W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.2 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Rise Time
28ns
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
3A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
900V
Avalanche Energy Rating (Eas)
200 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1213 items
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Unit Price
Ext. Price
STF3HNK90Z Product Details
STF3HNK90Z Description
The STMicroelectronics STF3HNK90Z is from the SuperMESH? series obtained through an extreme optimization of ST's well-established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.
STF3HNK90Z Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
STF3HNK90Z Applications
Switching Applications
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