STGB18N40LZ-1

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Manufacturer part number:STGB18N40LZ-1

Manufacturer:STMicroelectronics

Description:STGB18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB18N40LZ-1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	MATTE TIN
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGB18
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Logic
Power - Max	150W
Transistor Application	AUTOMOTIVE IGNITION
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	360V
Max Collector Current	30A
Collector Emitter Breakdown Voltage	420V
Turn On Time	4450 ns
Test Condition	300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff)	22200 ns
Gate Charge	29nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	650ns/13.5μs
Gate-Emitter Voltage-Max	16V
RoHS Status	ROHS3 Compliant