IXGK72N60A3H1

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Manufacturer part number:IXGK72N60A3H1

Manufacturer:IXYS

Description:IGBT 600V 75A 540W TO264

Case Package:SOT-23

Datasheet:IXGK72N60A3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	540W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*72N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation	540W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.35V
Max Collector Current	75A
Reverse Recovery Time	140ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.35V
Turn On Time	63 ns
Test Condition	480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 60A
Turn Off Time-Nom (toff)	885 ns
IGBT Type	PT
Gate Charge	230nC
Current - Collector Pulsed (Icm)	400A
Td (on/off) @ 25°C	31ns/320ns
Switching Energy	1.4mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant