IRG4RC10UTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4RC10UTRL Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
IRG4RC10U
Input Type
Standard
Power - Max
38W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
8.5A
Test Condition
480V, 5A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 5A
Gate Charge
15nC
Current - Collector Pulsed (Icm)
34A
Td (on/off) @ 25°C
19ns/116ns
Switching Energy
80μJ (on), 160μJ (off)
RoHS Status
Non-RoHS Compliant
IRG4RC10UTRL Product Details
IRG4RC10UTRL Description
IRG4RC10UTRL emerges as an insulated gate bipolar transistor provided by Infineon Technologies. It is a generation 4 IGBT providing tighter parameter distribution and higher efficiency than the previous generation. IRG4RC10UTRL is optimized for high operating frequencies (8-40 kHz in hard switching) and for specified application conditions. It is available in the industry standard TO-252AA package for the purpose of saving board space.