IRGP4660DPBF

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Manufacturer part number:IRGP4660DPBF

Manufacturer:Infineon Technologies

Description:IRGP4660DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4660DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	330W
Rise Time-Max	56ns
Element Configuration	Single
Power Dissipation	134W
Input Type	Standard
Power - Max	330W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	100A
Reverse Recovery Time	115 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.6V
Test Condition	400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 48A
Gate Charge	140nC
Current - Collector Pulsed (Icm)	144A
Td (on/off) @ 25°C	60ns/145ns
Switching Energy	625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	46ns
Height	20.7mm
Length	15.87mm
Width	5.31mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free