IRG7PH50UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG7PH50UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
556W
Number of Elements
1
Rise Time-Max
60ns
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
35 ns
Power - Max
556W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
430 ns
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
140A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
75 ns
Test Condition
600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Turn Off Time-Nom (toff)
710 ns
IGBT Type
Trench
Gate Charge
290nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
35ns/430ns
Switching Energy
3.6mJ (on), 2.2mJ (off)
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
65ns
Height
20.7mm
Length
15.87mm
Width
5.31mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.42000
$12.42
IRG7PH50UPBF Product Details
IRG7PH50UPBF Description
The IRG7PH50UPBF hashigh efficiency in a wide range of applications.It is suitable for a wide range of switching frequencies due tolow VCE (ON) and low switching losses.This device is rugged transient performance for increased reliability and excellent current sharing in parallel operation.