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IRG7PH50UPBF

IRG7PH50UPBF

IRG7PH50UPBF

Infineon Technologies

IRG7PH50UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH50UPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 556W
Number of Elements 1
Rise Time-Max 60ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 35 ns
Power - Max 556W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 430 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 140A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 75 ns
Test Condition 600V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 710 ns
IGBT Type Trench
Gate Charge 290nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 35ns/430ns
Switching Energy 3.6mJ (on), 2.2mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 65ns
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.42000 $12.42
IRG7PH50UPBF Product Details

IRG7PH50UPBF Description


The IRG7PH50UPBF has high efficiency in a wide range of applications.It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.This device is rugged transient performance for increased reliability and excellent current sharing in parallel operation.


IRG7PH50UPBF Features


? Low VCE (ON) trench IGBT technology

? Low switching losses

? Maximum junction temperature 175 °C

? Square RBSOA

? 100% of the parts tested for ILM

? Positive VCE (ON) temperature co-efficient

? Tight parameter distribution

? Lead -Free

 

IRG7PH50UPBF Applications


? U.P.S

? Welding

? Solar inverter

? Induction heating

 


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