IXGR55N120A3H1

new-10%

Manufacturer part number:IXGR55N120A3H1

Manufacturer:IXYS

Description:IGBT 1200V 70A 200W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR55N120A3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	ULTRA FAST, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	ISOLATED
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.35V
Max Collector Current	70A
Reverse Recovery Time	200 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	70 ns
Test Condition	960V, 55A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 55A
Turn Off Time-Nom (toff)	1253 ns
IGBT Type	PT
Gate Charge	185nC
Current - Collector Pulsed (Icm)	330A
Td (on/off) @ 25°C	23ns/365ns
Switching Energy	5.1mJ (on), 13.3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant