STGB7NB60HDT4

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Manufacturer part number:STGB7NB60HDT4

Manufacturer:STMicroelectronics

Description:STGB7NB60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB7NB60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	7A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB7
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	80W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	48ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	14A
Reverse Recovery Time	100ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Max Breakdown Voltage	600V
Turn On Time	63 ns
Test Condition	480V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 7A
Turn Off Time-Nom (toff)	220 ns
Gate Charge	42nC
Current - Collector Pulsed (Icm)	56A
Td (on/off) @ 25°C	15ns/75ns
Switching Energy	85μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead