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HGTP12N60C3D

HGTP12N60C3D

HGTP12N60C3D

ON Semiconductor

HGTP12N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGTP12N60C3D Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 104W
Current Rating 24A
Base Part Number HGTP12N60
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 104W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 28 μs
Transistor Application MOTOR CONTROL
Turn-Off Delay Time 270 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 24A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Turn On Time 48 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 480 ns
Gate Charge 48nC
Current - Collector Pulsed (Icm) 96A
Switching Energy 380μJ (on), 900μJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.00000 $4
10 $3.59700 $35.97
100 $2.96940 $296.94
800 $2.54640 $2037.12
1,600 $2.16715 $2.16715
HGTP12N60C3D Product Details

Description


The HGTP12N60C3D is a 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes. The greatest properties of MOSFETs and bipolar transistors are combined in this series of MOS gated high voltage switching devices. The device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly. The TA49123 development type IGBT was used. The TA49188 development type diode is utilized in anti-parallel with the IGBT.

The IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses.

Previously known as Developmental Type TA49182.



Features


  • Short Circuit Rating

  • Low Conduction Loss

  • Hyperfast Anti-Parallel Diode

  • 24A, 600V at TC=25°C

  • Typical Fall Time at TJ=150°C...210ns



Applications


  • SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • UPS (Uninterruptible Power Supply) system.

  • AC and DC motor drive offering speed control.

  • Chopper and inverters.

  • Solar inverters.


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