HGTP12N60C3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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HGTP12N60C3D Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
104W
Current Rating
24A
Base Part Number
HGTP12N60
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
104W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
28 μs
Transistor Application
MOTOR CONTROL
Turn-Off Delay Time
270 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
24A
Reverse Recovery Time
40 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.65V
Turn On Time
48 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Turn Off Time-Nom (toff)
480 ns
Gate Charge
48nC
Current - Collector Pulsed (Icm)
96A
Switching Energy
380μJ (on), 900μJ (off)
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.00000
$4
10
$3.59700
$35.97
100
$2.96940
$296.94
800
$2.54640
$2037.12
1,600
$2.16715
$2.16715
HGTP12N60C3D Product Details
Description
The HGTP12N60C3D is a 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes. The greatest properties of MOSFETs and bipolar transistors are combined in this series of MOS gated high voltage switching devices. The device possesses a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates very modestly. The TA49123 development type IGBT was used. The TA49188 development type diode is utilized in anti-parallel with the IGBT.
The IGBT is suited for a wide range of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses.
Previously known as Developmental Type TA49182.
Features
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
24A, 600V at TC=25°C
Typical Fall Time at TJ=150°C...210ns
Applications
SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.