STGWA25H120DF2 Description

The STGWA25H120DF2 IGBT was created employing a cutting-edge, exclusive trench gate field-stop structure. The device is a member of the H series of IGBTs, which stands for the best conduction and switching loss compromise for high-switching frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce a safer paralleling operation.

STGWA25H120DF2 Features

• Safe paralleling

• Minimized tail current

• Low thermal resistance

• High-speed switching series

• VCE(sat) = 2.1 V (typ.) @ IC = 25 A

• Very fast recovery antiparallel diode

• Maximum junction temperature: TJ = 175 °C

• 5 μs minimum short circuit withstand time at TJ = 150 °C

STGWA25H120DF2 Applications

• Automotive

• Enterprise systems

• Communications equipment