STGP3NB60KD

new-10%

Manufacturer part number:STGP3NB60KD

Manufacturer:STMicroelectronics

Description:STGP3NB60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP3NB60KD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	50W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGP3
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	50W
Input Type	Standard
Transistor Application	POWER CONTROL
Drain to Source Voltage (Vdss)	600V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.8V
Max Collector Current	10A
Reverse Recovery Time	45 ns
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.8V
Turn On Time	19 ns
Test Condition	480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 3A
Turn Off Time-Nom (toff)	220 ns
Gate Charge	14nC
Current - Collector Pulsed (Icm)	24A
Td (on/off) @ 25°C	14ns/33ns
Switching Energy	30μJ (on), 58μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free