STGP3NB60FD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP3NB60FD Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Matte Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
68W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGP3
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
25W
Input Type
Standard
Power - Max
68W
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
6A
Reverse Recovery Time
45 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Turn On Time
16.5 ns
Test Condition
480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 3A
Turn Off Time-Nom (toff)
535 ns
Gate Charge
16nC
Current - Collector Pulsed (Icm)
24A
Td (on/off) @ 25°C
12.5ns/105ns
Switching Energy
125μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STGP3NB60FD Product Details
STGP3NB60FD DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances.The suffix “F” identifies a family optimized to achieve very low switching times for frequency applications(<40 KHz).