STGD3NB60SDT4

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Manufacturer part number:STGD3NB60SDT4

Manufacturer:STMicroelectronics

Description:STGD3NB60SDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGD3NB60SDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	48W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGD3
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	48W
Input Type	Standard
Turn On Delay Time	125 μs
Transistor Application	POWER CONTROL
Rise Time	150μs
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	1 μs
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	6A
Reverse Recovery Time	1.7μs
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Max Breakdown Voltage	600V
Turn On Time	275 ns
Test Condition	480V, 3A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 3A
Turn Off Time-Nom (toff)	4800 ns
Gate Charge	18nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	125μs/-
Switching Energy	1.15mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	4.5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free