STGF15H60DF Description


These devices are IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.


STGF15H60DF Features

? High speed switching
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Short-circuit rated
? Ultrafast soft recovery antiparallel diode

STGF15H60DF Applications


? Motor control
? UPS, PFC