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IXXX160N65C4

  • IXXX160N65C4
  • IXXX160N65C4

IXXX160N65C4

IXXX160N65C4

IXYS

IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT

SOT-23

IXXX160N65C4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series GenX4™, XPT™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 940W
Base Part Number 160N65
Element Configuration Single
Power Dissipation 940W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 290A
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.7V
Test Condition 400V, 80A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 160A
IGBT Type PT
Gate Charge 422nC
Current - Collector Pulsed (Icm) 800A
Td (on/off) @ 25°C 52ns/197ns
Switching Energy 3.5mJ (on), 1.3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30 $12.10167 $363.0501

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