NGTG40N120FL2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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NGTG40N120FL2WG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
535W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Element Configuration
Single
Input Type
Standard
Power - Max
535W
Collector Emitter Voltage (VCEO)
2.4V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Test Condition
600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
313nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
116ns/286ns
Switching Energy
3.4mJ (on), 1.1mJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.737026
$6.737026
10
$6.355685
$63.55685
100
$5.995929
$599.5929
500
$5.656537
$2828.2685
1000
$5.336355
$5336.355
NGTG40N120FL2WG Product Details
NGTG40N120FL2WG Description
The NGTG40N120FL2WG is a Field Stop II IGBT providing superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
NGTG40N120FL2WG Features
Extremely Efficient Trench with Field Stop Technology