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STGD10NC60KDT4

  • STGD10NC60KDT4
  • STGD10NC60KDT4

STGD10NC60KDT4

STGD10NC60KDT4

STMicroelectronics

STGD10NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD10NC60KDT4 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 62W
Terminal Form GULL WING
Base Part Number STGD10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 ns
Power - Max 62W
Transistor Application POWER CONTROL
Rise Time 6.5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Max Breakdown Voltage 600V
Turn On Time 23 ns
Test Condition 390V, 5A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Turn Off Time-Nom (toff) 242 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.427040 $6.42704
10 $6.063245 $60.63245
100 $5.720043 $572.0043
500 $5.396267 $2698.1335
1000 $5.090818 $5090.818
STGD10NC60KDT4 Product Details

Description


The STGD10NC60KDT4 is a 600 V short-circuit robust IGBT with a current rating of 10 amps. These devices are advanced PowerMESHTM technology-based IGBTs that are extremely fast. This method ensures a good balance between switching performance and low on-state behavior. For resonant or soft-switching applications, these devices are ideal.



Features


  • Very soft ultra fast recovery antiparallel diode

  • Short-circuit withstand time 10 μs

  • Lower on voltage drop (VCE(sat))

  • Lower CRES / CIES ratio (no cross-conduction susceptibility)

  • High efficiency and fast switching



Applications


  • High frequency motor controls

  • SMPS and PFC in both hard switch and resonant topologies

  • Motor drives

  • Consumer electronics

  • Industrial technology

  • The energy sector


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