STGWT40H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWT40H60DLFB Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.756003g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
283W
Base Part Number
STGWT40
Element Configuration
Single
Input Type
Standard
Power - Max
283W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
80A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Test Condition
400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
210nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
-/142ns
Switching Energy
363μJ (off)
Gate-Emitter Voltage-Max
20V
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.26000
$4.26
30
$3.61467
$108.4401
120
$3.13267
$375.9204
510
$2.66678
$1360.0578
STGWT40H60DLFB Product Details
STGWT40H60DLFB Description
The STGWT40H60DLFB is an IGBT developed using an advanced proprietary trench gate field stop structure. It is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.
STGWT40H60DLFB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A