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STGP19NC60H

STGP19NC60H

STGP19NC60H

STMicroelectronics

STGP19NC60H datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGP19NC60H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 130W
Base Part Number STGP19
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 32 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 272 ns
Gate Charge 53nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/97ns
Switching Energy 85μJ (on), 189μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.306160 $9.30616
10 $8.779396 $87.79396
100 $8.282449 $828.2449
500 $7.813631 $3906.8155
1000 $7.371350 $7371.35
STGP19NC60H Product Details

STGP19NC60H Description


With the help of the cutting-edge power MESH technology, the STGP19NC60H IGBT achieves a fantastic balance between switching performance and low on-state behavior.



STGP19NC60H Features


  • Low on-voltage drop(VCE(sat))

  • High input impedance(voltage driven)



STGP19NC60H Applications


  • High-frequency motor controls

  • SMPS and PFC in both hard switch and resonant topologies


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