Name	Value
Type	Parameter
Factory Lead Time	1 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Series	GenX3™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	25ns
JEDEC-95 Code	TO-220AB
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	48A
Power Dissipation-Max (Abs)	300W
Turn On Time	44 ns
Test Condition	480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 32A
Turn Off Time-Nom (toff)	347 ns
IGBT Type	PT
Gate Charge	115nC
Current - Collector Pulsed (Icm)	280A
Td (on/off) @ 25°C	22ns/130ns
Switching Energy	840μJ (on), 660μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	200ns
RoHS Status	RoHS Compliant

IXGP48N60B3

Related Part Number