IRGP4063D1-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRGP4063D1-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
330W
Base Part Number
IRGP4063D
Element Configuration
Single
Input Type
Standard
Power - Max
330W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.14V
Max Collector Current
100A
Reverse Recovery Time
80 ns
Collector Emitter Breakdown Voltage
600V
Test Condition
400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.14V @ 15V, 48A
Gate Charge
150nC
Current - Collector Pulsed (Icm)
192A
Td (on/off) @ 25°C
60ns/160ns
Switching Energy
1.4mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Height
20.7mm
Length
15.87mm
Width
5.13mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.378470
$2.37847
10
$2.243840
$22.4384
100
$2.116830
$211.683
500
$1.997010
$998.505
1000
$1.883971
$1883.971
IRGP4063D1-EPBF Product Details
IRGP4063D1-EPBF Description
IRGP4063D1-EPBF is a 600v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Infineon IRGP4063D1-EPBF provides high efficiency in a wide range of applications and switching frequencies, improved reliability due to rugged hard switching performance and higher power capability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGP4063D1-EPBF is in the TO-247AD package with 330w Power Dissipation.
IRGP4063D1-EPBF Features
Low VcE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C