STGP20V60DF

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Manufacturer part number:STGP20V60DF

Manufacturer:STMicroelectronics

Description:STGP20V60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP20V60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	167W
Base Part Number	STGP20
Element Configuration	Single
Power Dissipation	167W
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	40ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Test Condition	400V, 20A, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 20A
IGBT Type	Trench Field Stop
Gate Charge	116nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	38ns/149ns
Switching Energy	200μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$1.408528	$1.408528
10	$1.328800	$13.288
100	$1.253585	$125.3585
500	$1.182627	$591.3135
1000	$1.115686	$1115.686

STGP20V60DF Description

The STGP20V60DF is an IGBT developed using an advanced proprietary trench gate and field stop structure. It is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters.