IRG4BC20FD Description

The IRG4BC20FDPBF is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It is optimized for medium operating frequencies (1 to 5kHz in hard switching, >20kHz in resonant mode). It features a generation 4 IGBT design that provides tighter parameter distribution and higher efficiency than generation 3. The IGBT IRG4BC20FDPBF is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes are optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

IRG4BC20FD Features

• Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency   than Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry-standard TO-220AB package

• Lead-Free

IRG4BC20FD Applications

• HVAC

• Lighting

• Consumer Electronics

• telephones

• televisions

• calculators

• Power Management