IRG4RC10KD

new-10%

Manufacturer part number:IRG4RC10KD

Manufacturer:Infineon Technologies

Description:IRG4RC10KD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4RC10KD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	ULTRA FAST SOFT RECOVERY
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	38W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	28ns
JEDEC-95 Code	TO-252AA
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	9A
Power Dissipation-Max (Abs)	38W
Turn On Time	78 ns
Test Condition	480V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.62V @ 15V, 5A
Turn Off Time-Nom (toff)	410 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	49ns/97ns
Switching Energy	250μJ (on), 140μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	210ns
RoHS Status	Non-RoHS Compliant