IRGS4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGS4064DPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
260.39037mg
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
101W
Element Configuration
Single
Input Type
Standard
Power - Max
101W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.91V
Max Collector Current
20A
Reverse Recovery Time
62 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.6V
Test Condition
400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.91V @ 15V, 10A
IGBT Type
Trench
Gate Charge
32nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
27ns/79ns
Switching Energy
29μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
29ns
Height
4.83mm
Length
10.67mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRGS4064DPBF Product Details
IRGS4064DPBF Description
IRGS4064DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its low VCE (ON) and low switching losses, it is well-suited for a wide range of switching frequencies. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Increased reliability can be ensured based on rugged transient performance for increased reliability.