STGP8NC60KD

new-10%

Manufacturer part number:STGP8NC60KD

Manufacturer:STMicroelectronics

Description:STGP8NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP8NC60KD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	65W
Base Part Number	STGP8
Pin Count	3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	7A
Reverse Recovery Time	23.5ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Current - Collector (Ic) (Max)	15A
Turn On Time	23 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 3A
Turn Off Time-Nom (toff)	242 ns
Gate Charge	19nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	17ns/72ns
Switching Energy	55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free