STGW20NC60VD

new-10%

Manufacturer part number:STGW20NC60VD

Manufacturer:STMicroelectronics

Description:STGW20NC60VD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW20NC60VD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA FAST
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Current Rating	30A
Base Part Number	STGW20
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Input Type	Standard
Turn On Delay Time	31 ns
Transistor Application	POWER CONTROL
Rise Time	11.5ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	100 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	44ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	42.5 ns
Test Condition	390V, 20A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Continuous Collector Current	30A
Turn Off Time-Nom (toff)	280 ns
Gate Charge	100nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	31ns/100ns
Switching Energy	220μJ (on), 330μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free