STGW30N90D

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Manufacturer part number:STGW30N90D

Manufacturer:STMicroelectronics

Description:STGW30N90D datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW30N90D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	220W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STGW30
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	220W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	900V
Max Collector Current	60A
Reverse Recovery Time	152 ns
Collector Emitter Breakdown Voltage	900V
Turn On Time	41 ns
Test Condition	900V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 20A
Turn Off Time-Nom (toff)	928 ns
Gate Charge	110nC
Current - Collector Pulsed (Icm)	135A
Td (on/off) @ 25°C	29ns/275ns
Switching Energy	1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5.75V
RoHS Status	ROHS3 Compliant