STGW30NC60W

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Manufacturer part number:STGW30NC60W

Manufacturer:STMicroelectronics

Description:STGW30NC60W datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW30NC60W Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Current Rating	60A
Base Part Number	STGW30
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Input Type	Standard
Turn On Delay Time	29.5 ns
Transistor Application	MOTOR CONTROL
Rise Time	12ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	118 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Continuous Drain Current (ID)	30A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Turn On Time	42.5 ns
Test Condition	390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Drain to Source Resistance	2.5Ohm
Turn Off Time-Nom (toff)	189 ns
Gate Charge	102nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	29.5ns/118ns
Switching Energy	305μJ (on), 181μJ (off)
Gate-Emitter Thr Voltage-Max	5.75V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free