STGW35HF60WDI

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Manufacturer part number:STGW35HF60WDI

Manufacturer:STMicroelectronics

Description:STGW35HF60WDI datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW35HF60WDI Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Base Part Number	STGW35
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	35 ns
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	175 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	295 ns
Gate Charge	140nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	30ns/175ns
Switching Energy	185μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free