STGW35NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW35NB60S Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
200W
Base Part Number
STGW35
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Input Type
Standard
Power - Max
200W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Collector Emitter Breakdown Voltage
600V
Turn On Time
153 ns
Test Condition
480V, 20A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 20A
Turn Off Time-Nom (toff)
3600 ns
Gate Charge
83nC
Current - Collector Pulsed (Icm)
250A
Td (on/off) @ 25°C
92ns/1.1μs
Switching Energy
840μJ (on), 7.4mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,200
$1.21800
$1.218
STGW35NB60S Product Details
STGW35NB60S Description
STMicroelectronics has created an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performances using the most recent high voltage technology based on a proprietary strip arrangement.