STGW35NC60WD

new-10%

Manufacturer part number:STGW35NC60WD

Manufacturer:STMicroelectronics

Description:STGW35NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW35NC60WD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	260W
Base Part Number	STGW35
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Input Type	Standard
Power - Max	260W
Transistor Application	POWER CONTROL
Rise Time	12ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	40 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Turn On Time	42.5 ns
Test Condition	390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 20A
Turn Off Time-Nom (toff)	197 ns
Gate Charge	102nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	29.5ns/118ns
Switching Energy	305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant