IKQ50N120CH3XKSA1 Description

IKQ50N120CH3XKSA1 is a 1200v Low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKQ50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, three-level solar string inverter, and welding applications. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKQ50N120CH3XKSA1 is in the PG-TO247-3-46 package with 652W power dissipation.

IKQ50N120CH3XKSA1 Features

High efficiency in hard switching and resonant topologies

10μsec short circuit withstand time at Tvj=175°C 

Easy paralleling capability due to positive temperature coefficient in VcEsat

Low EMI

Low Gate Charge QG

Very soft, fast recovery full current anti-parallel diode

Maximum junction temperature Tvjmax=175°C

Pb-free lead plating; RoHS compliant

IKQ50N120CH3XKSA1 Applications

Industrial UPS

Charger

Energy Storage

Three-level Solar String Inverter

Welding