STGB20NB41LZT4

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Manufacturer part number:STGB20NB41LZT4

Manufacturer:STMicroelectronics

Description:STGB20NB41LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB20NB41LZT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	20V
Max Power Dissipation	200W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB20
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	1 μs
Transistor Application	AUTOMOTIVE IGNITION
Rise Time	220ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	12.1 μs
Collector Emitter Voltage (VCEO)	382V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	442V
Collector Emitter Saturation Voltage	2V
Max Breakdown Voltage	442V
Turn On Time	1220 ns
Test Condition	320V, 20A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic	2V @ 4.5V, 20A
Turn Off Time-Nom (toff)	16100 ns
Gate Charge	46nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	1μs/12.1μs
Switching Energy	5mJ (on), 12.9mJ (off)
Gate-Emitter Thr Voltage-Max	2.4V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free