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STGW75M65DF2

  • STGW75M65DF2
  • STGW75M65DF2

STGW75M65DF2

STGW75M65DF2

STMicroelectronics

STGW75M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW75M65DF2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series M
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number STGW75
Input Type Standard
Power - Max 468W
Reverse Recovery Time 165ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 120A
Test Condition 400V, 75A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
IGBT Type Trench Field Stop
Gate Charge 225nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 47ns/125ns
Switching Energy 690μJ (on), 2.54mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.19000 $6.19
10 $5.59300 $55.93
100 $4.65400 $465.4
600 $4.02063 $2412.378
1,200 $3.45280 $3.4528
3,000 $3.30720 $9.9216
STGW75M65DF2 Product Details

STGW75M65DF2 Description


The STGW75M65DF2 is an IGBT built using a patented trench gate field-stop structure. The STGW75M65DF2 is an IGBT of the M series that provides an optimal mix of inverter system performance and efficiency where low-loss and short-circuit functionality are critical. Furthermore, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.



STGW75M65DF2 Features


  • Positive VCE(sat) temperature coefficient

  • Low thermal resistance

  • Soft and very fast recovery antiparallel diode

  • Maximum junction temperature: TJ = 175 °C



STGW75M65DF2 Applications


  • General-purpose inverter

  • Motor control

  • UPS

  • PFC


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