STGW80H65FB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGW80H65FB Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
469W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW80
Element Configuration
Single
Input Type
Standard
Power - Max
469W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
120A
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.6V
Test Condition
400V, 80A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 80A
IGBT Type
Trench Field Stop
Gate Charge
414nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
84ns/280ns
Switching Energy
2.1mJ (on), 1.5mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$26.636480
$26.63648
10
$25.128755
$251.28755
100
$23.706372
$2370.6372
500
$22.364502
$11182.251
1000
$21.098587
$21098.587
STGW80H65FB Product Details
STGW80H65FB Description
The STGW80H65FB is a Trench gate field-stop IGBT, HB series, 650 V, 80 A high speed. This IGBT gadget was created employing a cutting-edge, exclusive trench gate and field stop structure. The device is a new "HB" series IGBT, which stands for the best compromise between conduction and switching losses for any frequency converter's efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce a safer paralleling operation.