STGWA30H65DFB                   Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequenc converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGWA30H65DFB                       Features

· Maximum junction temperature: TJ = 175 °C

· High speed switching series

· Minimized tail current

· Low saturation voltage: VCE(sat) = 1.55 V

(typ.) @ IC = 30 A

· Tight parameter distribution

· Safe paralleling

· Low thermal resistance

· Very fast soft recovery antiparallel diode

STGWA30H65DFB                       Applications

· Photovoltaic inverters

· High frequency converters