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IXXH50N60B3D1

IXXH50N60B3D1

IXXH50N60B3D1

IXYS

IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

SOT-23

IXXH50N60B3D1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Packaging Tube
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 600W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 120A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.55V
Turn On Time 75 ns
Test Condition 360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A
Turn Off Time-Nom (toff) 320 ns
IGBT Type PT
Gate Charge 70nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 27ns/100ns
Switching Energy 670μJ (on), 740μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $57.998960 $57.99896
10 $54.716000 $547.16
100 $51.618868 $5161.8868
500 $48.697045 $24348.5225
1000 $45.940609 $45940.609

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