IXXH50N60B3D1

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Manufacturer part number:IXXH50N60B3D1

Manufacturer:IXYS

Description:IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT

Case Package:SOT-23

Datasheet:IXXH50N60B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	600W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation	600W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	120A
Reverse Recovery Time	25 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.55V
Turn On Time	75 ns
Test Condition	360V, 36A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 36A
Turn Off Time-Nom (toff)	320 ns
IGBT Type	PT
Gate Charge	70nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	27ns/100ns
Switching Energy	670μJ (on), 740μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant