STGWA45HF60WDI

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Manufacturer part number:STGWA45HF60WDI

Manufacturer:STMicroelectronics

Description:STGWA45HF60WDI datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWA45HF60WDI Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	310W
Base Part Number	STGW45
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	30 ns
Power - Max	310W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	145 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	90 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Test Condition	400V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Gate Charge	160nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	-/145ns
Switching Energy	330μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free