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IGW50N60TFKSA1

IGW50N60TFKSA1

IGW50N60TFKSA1

Infineon Technologies

IGW50N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW50N60TFKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 333W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
Turn On Time 60 ns
Test Condition 400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 396 ns
IGBT Type Trench Field Stop
Gate Charge 310nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 26ns/299ns
Switching Energy 2.6mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.004000 $5.004
10 $4.720755 $47.20755
100 $4.453542 $445.3542
500 $4.201455 $2100.7275
1000 $3.963637 $3963.637
IGW50N60TFKSA1 Product Details

IGW50N60TFKSA1 Description

 

IGW50N60TFKSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW50N60TFKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IGW50N60TFKSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IGW50N60TFKSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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