IGW50N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IGW50N60TFKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
FAST SWITCHING
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
333W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-247AC
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
Turn On Time
60 ns
Test Condition
400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Turn Off Time-Nom (toff)
396 ns
IGBT Type
Trench Field Stop
Gate Charge
310nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
26ns/299ns
Switching Energy
2.6mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.004000
$5.004
10
$4.720755
$47.20755
100
$4.453542
$445.3542
500
$4.201455
$2100.7275
1000
$3.963637
$3963.637
IGW50N60TFKSA1 Product Details
IGW50N60TFKSA1 Description
IGW50N60TFKSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW50N60TFKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.