Description

The STGW25M120DF3 is a 1200 V, 25 A, low-loss M series Trench gate field-stop IGBT in a TO-247 package. This STGW25M120DF3 device is an IGBT with a trench gate field stop construction developed in-house. The device is part of the M series of IGBTs, which provide an ideal blend of inverter system performance and efficiency in applications where low-loss and short-circuit functionality are critical. Furthermore, the narrow parameter distribution and positive VCE(sat) temperature coefficient result in a safer paralleling operation.

Features

? Tight parameter distribution

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Soft- and fast-recovery antiparallel diode

? Maximum junction temperature: TJ = 175 °C

? 10 μs of short-circuit withstand time

? Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A

Applications

? Solar

? Welding

? Industrial drives

? UPS

? Consumer electronics