AIGW40N65F5XKSA1                   Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

AIGW40N65F5XKSA1                  Features

High speed F5technology offering:

·Best-in-Class efficiencyin hard switching and resonant to pologies

650V breakdown voltage Low gate charge QG

·Maximum junction temperature 175°C·Dynamically stress tested

Qualified according to AEC-Q101·Green package(RoHS compliant)

·Complete product spectrum and PSpice Models

AIGW40N65F5XKSA1                  Applications

·Off-board charger·On-board charger·DC/DC converter

·Power-factor correction